成大物理系徽
凝態組博士班專題討論 (Seminar)
演講題目: YBCO Films With Controllable In-plane Orientations Grown On YSZ Substrates/Homo-bi-epitaxial Grainboundary Junctions
演講人: 林保安 博士
中央研究院物理研究所
演講時間: 2007 年 12 月 20 日
星期四  下午 2 : 10
演講地點: 物理二館 一樓會議室(49101)
內容摘要:  
Our main work is to develop the techniques for making HTS homo-bi-epitaxial grainboundary junctions. We have studied the in-plane orientations of epitaxial growth of YBCO on YSZ substrates under different deposition conditions and found improved processes for growing 0-degree and 45-degree films. Aided with the knowledge of producing films of pure orientations, we have successfully fabricated reproducible bi-epitaxial grainboundary junctions. The critical current densities of asymmetric 45-degree grainboundary junctions are measured and analyzed. The I-V curves show substantial deviations from that of RSJ model with a current density of the same order of those of mixed films. The reason for deviation from RSJ model is probably due to the existence of facets along the grain boundary. Work is under progress to control faceting by producing zigzag boundary line with e-beam lithography.