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教授黃正雄 Hwang, Jenn-Shyong

  • Position 教授
    Name 黃正雄 Hwang, Jenn-Shyong
    E-mail pjshwang@mail.ncku.edu.tw
  • 電子郵址/Email Address pjshwang@mail.ncku.edu.tw
    專長/Expertise  雷射光譜、半導體物理、超快光電、兆赫幅射、光散射
  • 學歷 美國紐約市立大學博士
  • 編號 畢業年份 姓名 學位 畢業論文 共同指導
    11 100 蔡鎔澤 博士 以調制光譜、拉曼光譜及X-ray 繞射研究砷銻化鎵、氮化銦和氮化銦/氮化鎵多層量子井的光學特性  
    10 96年度 王太伸 博士 以光調制光譜、光激發螢光光譜、拉曼光譜、穿透光譜、反射光譜研究GaAsSb/GaAs、ZnO、AlGaN/GaN、
    Oxide-GaAs材料的光學特性
     
    9 95年度 林輝慶 博士 臨界電場、共軛高分子與飽和效應對半導體微結構產生之兆赫輻射的影響  
    8 94年度 林光儀 博士 螢光光譜、光調制光譜及拉曼光譜研究氮磷化銦鎵/砷化鎵異質結構之光電特性  
    7 93年度 張仲志 博士 光激發SIN+ GaAs InAlAs與氧化物-GaAs 半導體產生兆赫輻射性質之研究  
    6 92年度 戴學斌 博士 利用拉曼散射技術研究鐵電材料之相變化、掺雜效應與薄膜之結晶化  
    5 90年度 張廣興 博士 以光調制光譜之傅利葉轉換、光壓效應及高磁場下之光調制光譜探討半導體之光電特性  
    4 90年度 黃文啟 博士 光調制光譜及拉曼光譜研究光電材料之表面特性  
    3 86年度 周維揚 博士 光調制光譜研究InAlAs、InP的表面費米能皆與表面態分佈  
    2 88年度 王瑤池 博士 InGaAs/InAlAs單一量子井、delta 掺雜 GaAs和 氧化物-GaAs介面性質之光調制光譜研究  
    1 83年度 田興龍 博士 III-V族半導體GaSb、InP、GaAs 及合金半導體GaInP、InAlAs 的光調制光譜研究  
  • 編號 計劃名稱(編號) 執行期間 補助單位 擔任職務
    13 以雷射光譜及兆赫輻射研究氮磷化銦鎵/砷化鎵異質結構的光電特性 20050801-20060731 國科會 主持人
    12 半導體微結構之費米能階及二維電子氣研究 19940801-19960131 國科會 主持人
    11 溫度對半導體異質微結構之表面態密度及費米能階的影響 19950801-19970131 國科會 主持人
    10 金屬與半導體的界面電場之研究 19960801-19971031 國科會 主持人
    9 利用調制光譜學研究InP和InAlAs微結構之内建電場及表面費米能階 19970801-19981031 國科會 主持人
    8 以光電壓效應與溫度的關係研究半導體表面費米能階與表面態分佈及其密度 19980801-19991031 國科會 主持人
    7 高磁場下之光調制光譜 19990801-20001231 國科會 主持人
    6 (1)以光照強度與表面勢壘之關係研究半導體表面態密度及能量譜(2)珈瑪射線對四氰基淋甲烷及其電核轉移錯合光電研究 20000801-20011231 國科會 主持人
    5 以拉曼光譜研究鑽石、類鑽石及有機半導體材料之光電特性及應用 20010801-20030131 國科會 主持人
    4 兆赫波的產生與檢測(1/2) 20020801-20031031 國科會 主持人
    3 兆赫波的產生與檢測(2/2) 20030801-20040731 國科會 主持人
    2 時析兆赫光譜與光反射光譜於半導體微奈米結構之載子動力學研究 20040801-20050731 國科會 主持人
    1 以雷射光譜及兆赫輻射研究氮磷化銦鎵/砷化鎵異質結構的光電特性 20050801-20070731 國科會 主持人
  • I. Journals(1990- ):

    1. Studies of Photon Correlation Spectrscopy of the Micro-emulsion of H2O/Tween 80/Benzene Derivative, J. S. Hwang, H. J. Gi, P. L. Wu and S. N. Chen, Journal of the Chinese Chemical Society, pp223-229 (1990).

    2. Determination of the Molecular Weight and Partical Radius of Gelatin Micelles by Sedimentation and Optical Mixing Spectroscopy, J. S. Hwang, H. J. Gi and S. N. Chen, Journal of the Chinese Chemical Society, pp157-161 (1990).

    3. Photon Correlation Spectroscopy Studies of Triton X-100 micells, C. H. Li, J. S. Hwang, C. L. Lin, H. J. Gi and S. N. Chen, Journal of Chinese Colloid and Interface Scociety, pp1-11 (1990).

    4. Zone-folding Raman Modes of Tetramethylammonium Tetra-chlorozincate in Structurally Modulated Phase, X. K. Chen, W. k. Lee, J. S. Hwang and H. Z. Cummins, Physical Review B, pp.8465-8470 (1990).

    5. Raman Spectra of Si-implanted GaSb, Y. K. Su, K. J. Gan, J. S. Hwang and S. L. Tyan, Journal of Applied Physics, pp.5584-5587, (1990).

    6. Studies of Interband Transitions and Thermal Annealing Effects on Ion-implanted (100) GaSb by Photoreflectance and Raman Spectra, J. S. Hwang, S. L. Tyan, M. J. Lin and Y. K. Su, Solid State Communications, pp.891-896, (1991).

    7. Characterization of Si-implanted GaSb, Y. K. Su, K. J. Gan and J. S. Hwang, Nuclear Instruments and Methods in Physics Research Section B- Beam Iteractions with Materials and Atoms, pp794-797, (1991).

    8. The Magnetic Ordering in (C2H5NH3)2Mn1-xCdxCl4, C. Tien, J. S. Hwang, I. J. Jang, H. M. Duh, C. W. Wur, K. J. Lin, and S. T. Lin, Chinese Journal of Physics, pp405-414, (1992).

    9. Study of Schottky Barrier Formation in InP(110) by Photoreflectance」, J. S. Hwang and Z. Hang, Proceeding of the 4th International Conference on Indium Phosphide and Related Materials in R.I., USA, pp518-519, Apr. (1992) EI

    10. Studies of Fornation and Inteface of Oil-Water Microemulsion, H. J. Gi, S. N. Chen, S. J. Hwang and C. Tien, Chinese Journal of Physics, pp.665-678, (1992).

    11. Photoreflectance Studies of Ga0.5In0.5P/GaAs Hetero-structures Grown by MOCVD Technique, J. S. Hwang, Z. Hang, S. T. Tyan, S. W. Ding, J. H. Tung, C. Y.Chen, B. J. Lee and J. T. Hsu, Japanese Journal of Applied Physics (Letter), pp.L571-L573, (1992).

    12. In-situ Photorefletanc Studies of Schottky Barrier Formation in InP(110), J. S. Hwang and S. L. Tyan, Journal of Vacuum Science & Tcehnology A, pp3176-3178, (1992).

    13. Study of the Radial Characterization of DOPG Vesicles in Mediums by Photon Correlation Spectroscopy, C. L. Lin, S. C. Wu, J. S. Hwang, S. C. Ma and S. J. Jou, Journal of Chinese Colloid & Interface Society, pp.5-14,(1993).

    14. Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxia Grown InAlAs Heterostructures, J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, H. H. Lin, T. L. Lee, D. Weyburne and Z. Hang, Applied Physics Letters, 64(24), 13 June pp.3314-3316(1994).

    15. Investigation of Modulation-doped GaAs/AlGaAS Singal Quantum Well by Photoreflectance, S. L. Tyan, M. L. Lee, Y. C. Wang, W. Y. Wang, and J. S. Hwang, Journal of Vacuum Science & Tcehnology B13(3), May/Jun, pp1010, (1995).

    16. Study of Surface Fermi Level and Surface State Distribution in InAlAs Surface-intrinsic-n+ Structure by Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, H. H. Lin and T. L. Lee, Applied Physics Letters 67 (16) 16 Oct. pp2350-2352 (1995).

    17. Time Resolved Photoreflectance of GaAs and InAlAs, S. L. Tyan, Y. C. Wan, C. C. Chang, J. S. Hwang, Chinese Journal of Physics pp.669 (1995).

    18. Raman Studies of Polymer-dispersed Liquid Crystal Films, Andy Y. G. Fuh, C. R. Sheu, C. Y. Huang, B. W. Tzen, G. L. Lin, T. C. Ko and J. S. Hwang, Chinese Journal of Physics Vol. 33 pp547-561 (1995).

    19. Photoreflectance Study of Strained InAlAs/InP Structrues, Jenn-Shyong Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang and J. H. Tung, Proceeding of the 1995 Spring Meeting of Materials Research Society, Vol. 379, pp217-222 (1995). EI

    20. Unambiguous Photoreflectance Determination of Electric Fields Using Phase Suppression, S. L. Tyan, Y. C. Wang, J. S. Hwang and H. Shen,68(24), Applied Physics Lett.,68(24), pp.3452-3454(1996)

    21.The Electric Field Measuring by Phase Selective Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, H. Shen, Proceeding of the 1996 Spring Meeting of Materials Research Society, Vol. 421 (1996). EI

    22. Built-in electric field and surface Fermi level in InP surface-intrinsic-N+ structures by modulation spectroscopy, J. S. Hwang and M. C. Hung, J. Appl. Phys.,82(7), pp.3888 (1997).

    23. Electric Field Separation by Phase Selection in Modulation Spectroscopy of Photoreflectance, Y. C. Wang, W. C. Hwang and J. S. Hwang, Solid State Communications, 104(12), pp. 717-721(1997)

    24. Effects of substrate preheating for the growth of ZnxCd1−xTe/(1 0 0)GaAs by MOCVD, Wang, Y.H.a; Sze, P.W.a; Wang, N.F.a; Hwang, J.S.b; Chou, W.Y.b; Wang, C.H.c; Cherng, Y.T.c; Chiang, C.D.c; Houng, M.P., J. Crystal Growth 180(2), pp. 177-184(1997)

    25. 『Oxide-GaAs Interfacial Electronic Properties Characterized by Modulation Spectroscopy of Photoreflectance』 , J.S. Hwang, Y.C. Wang, W.Y. Chou, S.L. Tyan, M. Hong, J.P. Mannaerts, and J. Kwo, Journal of Applied Physics, Vol.83 (5), Communications, pp. 2857-2859(1998).

    26. 『Analysis of Fermi level Pinning and Surface State Distribution in InAlAs Heterostructures』 , W.Y. Chou, G.S. Chang, W.C. Hwang and J.S. Hwang, Journal of Applied Physics 83 (7), pp. 3690-3695 (1998).

    27. 『Diffusion Analysis of Gelatin Solutions by Photocorrelation Spectroscopy』 , J.S. Hwang, Z.P. Yang, S.B. Dai, S.L. Tyan, M.T. Kuo, and C.L. Lin, Chinese Journal of Physics 36 (5), p. 733 (1998).

    28.『Determination of Surface State Density for GaAs and InAlAs by Room Temperature Photoreflectance』 , G.S. Chang, W.C. Hwang, Y.C. Wang, Z.P. Yang, and J.S. Hwang, Communication, Journal of Applied Physics 86(3), p1765 (1999).

    29.『Studies of Lattice-matched InGaAs/InAlAs Single Quantum Well by Photoreflectance Spectroscopy and Wet Chemical Etching』, Y.C. Wang, Z.P. Yang, J.S. Hwang, Solid State Communications 111(4), p223 (1999).

    30.『Energy spectrum of surface states of lattice-matched InAlAs surface intrinsic-n+ structure』 , J.S. Hwang, W.C. Hwang, Z.P. Yang, and G.S. Chang, Applied Physics Letters 75(16), p2467 (1999).

    31. 『Phase Transition of LixNa1-xNbO3 Studies by Raman Scaterring Method』, Y.D. Juang, S.B. Dai, Y.C. Wang, J.S. Hwang, M.L. Hu, and W.S. Tse, Solid State Communications Vol. 111, p723 (1999).

    32.「Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance」, J.S. Hwang and G.S. Chang, Proceeding of the 1999 Spring Meeting of Materials Research Society, Vol.573 PP. 213-218 (1999). EI


    33.『Low Temperature Phase Transition of Li0.12Na0.88NbO3 Studies by Raman Scattering』,Y.D. Juang, S.B. Dai, J.S. Hwang, Y.C. Wang, M.L. Hu, and W.S. Tse, Journal of Applied Physics, 88, pp742-745 (2000).

    34. 『Electroreflectance and Photoreflectance Studies of Surface Fermi Level and Surface Densities of InP SIN+ Structures』, W.C. Hwang, Y. J. Cheng, Y. C. Wang, and J. S. Hwang, Journal of Vacuum Science & Technology B, 18, p.1967 (2000).

    35. 『A Photoreflectance Study of the Surface State Density and Distribution Function of InAlAs』, J. S. Hwang, W. C. Hwang , C. C. Chang , S. C. Chen , and Y. T. Lu, Journal of Applied Physics, 89, pp 396-400 (2001).

    36. 『Photoreflectance Studies of the Surface State Density of InAlAs』, J. S. Hwang, G. S. Chang, W. C. Hwang, and W. J. Chen, Journal of Applied Physics, 89(3) , pp1771-1776 (2001).

    37. 『Application of Diamond-Like Carbon Film to Phase-change Optical Recording Discs』, J. F. Chang, W. C. Hwang, C. T. Guo, H. Y. Ueng, T. F. Young, K. H. Sun and J. S. Hwang, Japanese Journal of Applied Physics, Vol. 40 (2001) Pt.1. No. 3A, pp. 38-42

    38. 『應用類鑽石膜至表面聲波濾波器』,張振福, 黃文啟, 黃正雄, 工業材料雜誌, 173期, pp171-174 (2001).
    10. 『應用類鑽石膜至相變化光碟之研究』,黃文啟, 張振福, 楊台發, 黃正雄, 工業材料雜誌, 176期, pp167-173 (2001).

    39.「Study of Self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance」, J.S. Hwang, C.C. Chang, G.S. Chang, L.B. Chen, Y.T. Lu, H.H. Lin, M.C. Chen, Mat. Res. Soc. Symp. Proc.Vol.642, J3.51 (2001). EI

    40. 『A novel approach for the Fourier transform of photoreflectance spectra』, J. S. Hwang, C. C. Chang, M. F.Chen, C. W. Kuo, and Y. T. Lu, Journal of the Physical Society of Japan, Vol. 71(12), letter, pp 2851-2854 (2002).

    41. 『Schottky barrier height and interfacial state density on oxide-GaAs interface』, J. S. Hwang, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, Journal of Applied Physics, 94(1), pp 348-353 (2003).

    42. 『Using Raman scattering to study the doping effect and low-temperature phase transition of Li0.01K0.99NbO3 ceramics』, S. B. Dai, Y. D. Juang, J. S. Hwang, and S. Y. Chu, J. of Crystal Growth 257, pp 316-320 (2003).

    43. 『Effects of calcium on the phase transition and the dielectric properties of Sm-modified PbTiO3 ceramics』, S. B. Dai, Y. D. Juang, J. S. Hwang, D. E. Cheng, and S. Y. Chu, J. of Crystal Growth 255, pp 298-302 (2003).

    44. 『Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance』, J. S. Hwang, M. F. Chen, K. I. Lin, C. N. Tsai, W. C. Hwang, W. Y. Chou, H. H. Lin, and M. C. Chen, Japanese Journal of Applied Physics, Vol. 42 (2003) Pt. 1, No. 9A, pp 5876-5879.

    45. 『Optical excitations of finite carbon nanotubes』, R. B. Chen, C. P. Chang, F. L. Shyu, J. S. Hwang, M. F. Lin, CARBON, 42, pp 531-535 (2004).

    46. 『Novel method of pentacene alignment using photoaligned polyimide and its application in thin-film transistors』, W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. S. Mai, S. T. Lin, C. C. Liao, C. C. Chang, F. C. Tang, and J. S. Hwang, Chemistry of Materials, Vol. 16, pp 4610-4615 (2004).

    47. 『Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures』, J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, and C. W. Tu, Applied Physics Lett., 86(6), 061103-1(2005).

    48. 『Comparison between pulsed terahertz time-domain imaging and continuous wave terahertz imaging』, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang,Semicond. Sci. Technol. 20(2005) S293-S299 (2005)

    49. 『Terahertz Radiation from In0.52Al0.48As and GaAs SIN+ Structures with Various Surface-Intrinsic Layer Thicknesses』, J. S. Hwang, H. C. Lin, K. I. Lin and X. C. Zhang, Applied Physics Letters 87, 121107 (2005).

    50.『Compact Continuous-wave sub-THz system for inspection applications』, Nick Karpowicz, Hua Zhong, Cunlin Zhang, Kuang-I Lin, Jenn-Shyong Hwang, Jingzhou Xu, and X.-C. Zhang, Applied Physics Letters, 86(5), P.054105 (2005)

    51. Magnetization of Finite Carbon Nanotubes, R. B. Chen, C. P. Chang, J. S. Hwang, D. S. Chuu, M. F. Lin, Journal of the Physical Society of Japan, Vol.74 No.5 (2005)

    52.「Non-Destructive Sub-THz CW Imaging」, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang, SPIE International Symposium, Photonics West 2005, Terahertz and gigahertz Electronics and Photonics IV, San Jose, Ca., UAS, 22-27 Jan. 2005, Proceedings of SPIE Vol. 5727 (2005). EI

    53. Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy, Chie-In Lee, Yan-Ten Lu1, Yan-Kuin Su, Shoou-Jinn Chang, Jenn-Shyong Hwang1 and Chung-Chih Chang1, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (33-36): L1045-L1047 2005 SCI

    54.『Effects of weak ordering of InGaPN』, K. I. Lin, J. Y. Lee, and J. S. Hwang,Applied Physics Letters, 86, 211914(2005) SCI

    55.Investigation of Structure and Properties on Nanocrystalline Silicon on Various Buffer Layers, G. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, K. I. Lin and J. S. Hwang, J. of Electronic Materials, Vol. 34, No. 8, (2005)20. SCI

    56. Studies of electro-optic properties and Band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang, Physica E: Low-dimensional Systems and Nanostructures 32 (2006) 211-214

    57. Material Properties of dilute nitrides: Ga(In)NAs and Ga(In)NP, C.W. Tu, W.M. Chen, I.A. Buyanova, J.S. Hwang, J. Crystal Growth 288 (2006) 7-11 SCI

    58. Preferential coalescence of nanocrystalline silicon on different film substrates, C. Y. Lin, Y. K. Fang*, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, and K. I. Lin, Journal of Non-Crystalline Solids 352, p. 44 (2006). SCI.

    59. Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering, K. I. Lin and J. S. Hwang, J. Applied Physics(Rapid Communications) 99, 056103 (2006)

    60.Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications,Chun-Yu Lin, Yean-Kuen Fang*, Shih-Fang Chen, Ping-Chang Lin, Chun-Sheng Lin, Tse-Heng Chou, Jenn-Shyong Hwang, and Kuang-I Lin Materials Science and Engineering B 127(2006) 251-254 SCI.

    61. Characteristics of InGaPN/GaAs heterostructures investigated by photoreflectance spectroscopy, T. S. Wang, K. I. Lin, and J. S. Hwang*, Journal of Applied Physics 100, 093709 (2006). SCI. NSC94-2112-M-006-024

    62. Band anticrossing in InGaPN alloys induced by N-related localized states, K. I. Lin and J. S. Hwang*, Applied Physics Letters 89, 192116 (2006). SCI. NSC94-2112-M-006-024

    63. Surface free energy of alloy nitride coatings deposited using closed field unbalanced magnetron sputter ion plating, C. C. Sun, S. C. Lee, W. C. Hwang, J. S. Hwang, I. T. Tang and Y. S. Fu, Materials Transactions, Vol. 47,No. 10(2006) pp.2533 to 2539

    64. Studies of the critical electric field and valley offset of a semiconductor characterized by terahertz radiation.J. S. Hwang, H. C. Lin, C. G. Chang, L. S. Chang, Y. T. Lu, Proc. of SPIE vol.6472, 647203-1 to 647203-8(2007)

    65. The dependence of teraherz radiation on the built-in electric field in semiconductor microstructures, J. S. Hwang, H. C. Lin et el.,Optics Express Vol.15, No.8 pp5120-5125(2007)

    66. Conjugate Polymer Induced Enhancement of THz Radiation in Semiconductors, J. S. Hwang, Hui-Chang Lin, Yin-Cheng Huang, Kuang-I Lin, Jer-Wei Chang and Tzung-Fang Guo, ECS Trans. 11, (5) 59(2007)

    67. Enhancement of THz Radiation in Semiconductors Induced by Conjugate Polymer,J. S. Hwang, H. C. Lin, Y. C. Huang, K. I. Lin, J. W Chang and T. F Guo, Electrochemical and Solid-State Letters, 11(3) H63-H65 (2008)

    68. Characterization of band gap and strain relaxation of GaAsSb/GaAs heterojunction and band alignment of GaAsSb/GaAs mutiple quantum wells, T. S. Wang, J. T. Tsai, K. I. Lin, H. C. Lin, Y. T. Lu, J. S. Hwang *), H. H. Lin, L. C. Chou, Material Science and Engineering B 147(2008) 131-135

    69. Analysis of band anticrossing in InGaPN alloys grown on GaAs substrattes, K. I. Lin, H. C. Lin, T. S. Wang, and J. S. Hwang* , Phys. stat. sol. (c) 5, No. 2, 449-453 (2008).

    70. Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN, K. I. Lin, Y. T. Lu and J. S. Hwang, Physica E-Low-Dimensional System and Nanostructures, Physica E 40(2008) 2188-2191

    71. Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance, T. S. Wang, K. I. Lin, H. C. Lin, Y. T. Lu and J. S. Hwang*, Physica E 40(2008) 1975-1978

    72. Synthesis and characterization of Al2O3-Ce0.5Zr0.5O2 powders prepared by chemical coprecipitation method, Chia-Che Chung, Hsing-I Hsing-I Hsiang, Jenn-Shyong Hwang, Tai-Shen Wang, J. of Alloys and Compounds (2008)

    73. Temperature-dependedce paramerters of band anticrossing in InGaPN alloys, K. I. Lin, T. S. Wang, J. T. Tsai, and J. S. Hwang, Journal of Applied Physics 104, 016109 (2008)

    74. Drift current dominated terahertz radiation from InN at low-density excitation,K. I. Lin,J. T. Tsai, T. S. Wang, J. S. Hwang,M. C. Chen, and G.C. Chi, Applied Physics Letters 93, 262102 (2008)

    75. Synthesis and characterization of Al2O3-Ce0.5Zr0.5O2 powders prepared by chemical coprecipitation method, Chia-Che Chung, Hsing-I Hsing-I Hsiang, Jenn-Shyong Hwang, Tai-Shen Wang, Journal of Alloys and Compounds,Volume 470, Issues 1-2, 20 February 2009, Pages 387-392

    76. Structural and Dielectric Characteristics of Calcium Strontium Magnesium Niobate, Chun-Te Lee, Chi-Yuen Huang, Yi-Chang Lin, and Jenn-Shyong Hwang, Jpn. J. Appl. Phys. 48(2009) 055501

    77. 兆赫輻射在半導體光電特性研究與成像檢測的應用,物理雙月刊(卅一卷二期) 2009 年四月

    78. Strong Surface Fermi Level Pinning and Surface State Density of GaAsSb Surface Intrinsic-n+ Structure, K. I. Lin, H. C. Lin, J. T. Tsai, C. S. Cheng, Y. T. Lu, J. S. Hwang* et al., Applied Physics Letters, 95, 141912(2009)

    79. K. I. Lin*, J. T. Tsai, J. S. Hwang, and M. C. Chen,『Terahertz radiation by spontaneous polarization fields in InN』, Physica E 42, 2669 (2010). SCI.

    79. J. S. Hwang*, J. T. Tsai, K. I. Lin, M. H. Lee, C. N. Tsai, H. W. Lin, S. Gwo, and M. C. Chen,『Terahertz radiation mechanism of native n-type InN with different carrier concentrations』, Applied Physics Express 3, 102202 (2010). SCI.

    80. Photoreflectance Study of InN Films with In and N Polarities, K. I. Lin*, J. T. Tsai, I. C. Su, J. S. Hwang*, and S. Gwo, Applied Physics Express 4, 112601 (2011). SCI.

    81. J. S. Hwang,* J. T. Tsai, I. C. Su, H. C. Lin and Y. T. Lu, P. C. Chiu and J. I. Chyi, GaAsSb bandgap, surface Fermi level and surface state density studied by photoreflectance modulation spectroscopy, Appl. Phys. Lett. 100, 222104(2012)�^
     
    II. Conference Papers:(International Conference Only)

    1. Study of Schottky Barrier Formation in InP(110) by Photoreflectance」, J. S. Hwang and Z. Hang, Proceeding of the 4th International Conference on Indium Phosphide and Related Materials, Apr. (1992) R.I., USA

    2. Photoreflectance Study of Strained InAlAs/InP Structrues, Jenn-Shyong Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang and J. H. Tung, the 1995 Spring Meeting of Materials Research Society, (1995) San Francisco Ca. USA.

    3. The Electric Field Measuring by Phase Selective Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, H. Shen, the 1996 Spring Meeting of Materials Research Society,(1996) San Francisco Ca. USA.

    4.Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance, J.S. Hwang and G.S. Chang, the 1999 Spring Meeting of Materials Research Society,(1999) San Francisco Ca. USA.

    5.Study of Self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance, J.S. Hwang, C.C. Chang, G.S. Chang, L.B. Chen, Y.T. Lu, H.H. Lin, M.C. Chen, the 2001 Fall Meeting of Mat. Res. Soc. (2001). Boston Ma. USA

    6.Non-Destructive Sub-THz CW Imaging, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang, SPIE International Symposium, Photonics West 2005, Terahertz and gigahertz Electronics and Photonics IV, San Jose, Ca., UAS, 22-27 Jan. 2005, Proceedings of SPIE Vol. 5727 (2005). EI

    7. Materials properties of dilute nitrides: Ga(In)NAs and Ga(In)NP, C. W. Tu, W. M. Chen, I. Buyanova, and J. S. Hwang, Invited talk in the International Conference on Advanced Materials (IUMRS-ICAM), 3-8 July (2005). Singapore.

    8. Effects of Epitaxial Strain and Atomic Ordering of InGaPN/GaAs Heterostructures, Kuang-I Lin, Tai-Shen Wang, Yan-Ten Lu, and Jenn-Shyong Hwang*, MBE Taiwan 2005.

    9. Studies of Electro-optical Properties and Band Alignment of InGaPN/GaAs Heterotructures by Photoreflectance and Photoluminescence, Kuang-I Lin, Yan-Ten Lu, and Jenn-Shyong Hwang*, MBE Taiwan 2005.

    10. Studies of Terahertz Radiation from InAlAs and GaAs Surface Intrinsic-N+ Structures and the Critical Electric Fields of Semiconductor, J. S. Hwang, H. C. Lin, K. I. Lin and Y. T. Lu, the International Conference on Quantum Electronics 2005 and the Pacific Rim Conference on Lasers and Electro-optics 2005(IQEC/CLEO-PR 2005), Tokyo, Japan

    11. Effects of epitaxial strain and atomic ordering InGaPN/GaAs heterostructures, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang*, 12th International Conference on Modulatted Semiconductor Structures (2005), New Mexico, USA

    12. Studies of electro-optic properties and Band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang*, 12th International Conference on Modulatted Semiconductor Structures (2005), New Mexico, USA

    13. Band alignment and effects of epitaxial strain and atomic ordering in InGaP(1-y)Ny/GaAS, European Materials Research Society Spring Meeting, May 29-June 2, 2006, Nice, France

    14. Studies of the critical electric field and valley offset of a semiconductor characterized by terahertz radiation.J. S. Hwang, H. C. Lin, C. G. Chang, L. S. Chang, Y. T. Lu, SPIE Photonics West 2007, Jan. 20-Jan. 25, 2007, San Jose, USA

    16. The critical electric field and L valley offset of semiconductors determined by terahertz radiation, J. S. Hwang a), H. C. Lin 1, K. I. Lin, Y. T. Lu 1, J. Y. Chyi and H. H. Lin , invited talk, MBE Taiwan 2007.

    17. The Enhancement of THz Radiation of Semiconductors Induced by Conjugate Polymer (DB-PPV), Jenn-Shyong Hwang, Hui-Ching Lin, Yin-Chieh Huang, and Kunag-I Lin, Meet. Abstr. –Electronchem. Soc. 702, 1259 (2007)

    18. Conjugated polymer induced enhancement of THz radiation in semiconductor, J. S. Hwang, H. H. Lin, K. I. Lin, SPIE 6893-12(2008), San Jose, USA

    19. K. I. Lin*, J. T. Tsai, J. S. Hwang, and M. C. Chen,『Polarity determination of InN by terahertz radiation』, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP65, p. 284.

    20. J. T. Tsai, K. I. Lin, Y. T. Lu, S. Gwo, M. C. Chen, G. C. Chi, and J. S. Hwang*,『Characterization of photoelastic effects on the optical properties of strained InN films』, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP67, p. 286.

    21. J. S. Hwang*, K. I. Lin, and C. C. Chang,『Determination of the polarity of InN by terahertz radiation』, SPIE Photonics West 2010, Ultrafast Phenomena in Semiconductors and nanostructure Materials XIV, Session 5: Plasmonics I, Paper 7600-24, San Francisco, USA, Jan. 23-28, 2010. (Invited Paper)

    22. K. I. Lin, J. T. Tsai, M. H. Lee, P. C. Chiu, S. H. Chen, J. I. Chyi, and J. S. Hwang*,『Surface Fermi level and surface state density in GaAsSb surface intrinsic-n+ structures by photoreflectance spectroscopy』, the APS March Meeting, Session C1.00200, Portland, Oregon, Mar. 15–19, 2010.

    23. Y. C. Huang*, Y. C. Chen, I. W. Chen, J. T. Tsai, K. I. Lin, J. S. Hwang, C. H. Wang, C. W. Liang, Y. H. Chu,『Phase Evolution in Mixed Phase BiFeO3 Epitaxial Films』, the 18th International Vacuum Congress, P1-EMP1-12, Beijing, China, Aug. 23-27, 2010.

    24. Kuang-I Lin*, Jung-Tse Tsai, Jenn-Shyong Hwang, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen,『Terahertz radiation mechanism of native n-type InN with different carrier concentrations』, the APS March Meeting, Session B11.00001, Dallas, Texas, Mar. 21–25, 2011.

    25. Y. C. Huang*, Y. C. Chen, C. Cheng, K. I. Lin, J. S. Hwang, W. I. Liang, H. J. Chen, and Y. H. Chu,『Monoclinic phase transition in stress-induced BiFeO3 epitaxial films』, the APS March Meeting, Session C1.00278, Dallas, Texas, Mar. 21–25, 2011.

    26.Kuang-I Lin*, Jung-Tse Tsai, I-Cheng Su, Jenn-Shyong Hwang, and Shangjr Gwo,『Photoreflectance study of the band gap, crystal-field splitting, and spin-orbit splitting in InN』, the 31st International Conference on the Physics of Semiconductors, p.60.18, Zurich, Switzerland, Jul. 29-Aug. 3, 2012.
  • 單位名稱 國立成功大學物理學系(所)
    序號 學年 姓名 期別 獎勵類別 代表作名稱
    1 73 黃正雄 第1期 甲種  
    2 74 黃正雄 第1期 甲種  
    3 75 黃正雄 第1期 甲種 非晶體物質的拉曼光譜強度及線形的研究
    4 79 黃正雄 第1期 甲種 以光調制光譜學技術研究退火處理對半導體表面的作用
    5 80 黃正雄 第1期 甲種 以光學技術研究半導體表面蕭特基墊壘及表面光電壓的形成
    6 81 黃正雄 第1期 甲種 利用時間解析的光調制及螢光光譜學
    7 82 黃正雄 第1期 甲種 In situ photoreflectance study of schottdy barrier formation in Inp(110)
    8 84 黃正雄 第1期 甲種 Investigation of Modulation-doped GaAs/AlGaAsSingle Quantum Well by photoreflectance
    9 88 黃正雄 第1期 甲種 Energy spectrum of surface states of lattice-matched InAlAs surface intrinsic-n+ structure
    10 90-95 黃正雄 研究計畫主持費