I. Journals(1990- ):
1. Studies of Photon Correlation Spectrscopy of the Micro-emulsion of H2O/Tween 80/Benzene Derivative, J. S. Hwang, H. J. Gi, P. L. Wu and S. N. Chen, Journal of the Chinese Chemical Society, pp223-229 (1990).
2. Determination of the Molecular Weight and Partical Radius of Gelatin Micelles by Sedimentation and Optical Mixing Spectroscopy, J. S. Hwang, H. J. Gi and S. N. Chen, Journal of the Chinese Chemical Society, pp157-161 (1990).
3. Photon Correlation Spectroscopy Studies of Triton X-100 micells, C. H. Li, J. S. Hwang, C. L. Lin, H. J. Gi and S. N. Chen, Journal of Chinese Colloid and Interface Scociety, pp1-11 (1990).
4. Zone-folding Raman Modes of Tetramethylammonium Tetra-chlorozincate in Structurally Modulated Phase, X. K. Chen, W. k. Lee, J. S. Hwang and H. Z. Cummins, Physical Review B, pp.8465-8470 (1990).
5. Raman Spectra of Si-implanted GaSb, Y. K. Su, K. J. Gan, J. S. Hwang and S. L. Tyan, Journal of Applied Physics, pp.5584-5587, (1990).
6. Studies of Interband Transitions and Thermal Annealing Effects on Ion-implanted (100) GaSb by Photoreflectance and Raman Spectra, J. S. Hwang, S. L. Tyan, M. J. Lin and Y. K. Su, Solid State Communications, pp.891-896, (1991).
7. Characterization of Si-implanted GaSb, Y. K. Su, K. J. Gan and J. S. Hwang, Nuclear Instruments and Methods in Physics Research Section B- Beam Iteractions with Materials and Atoms, pp794-797, (1991).
8. The Magnetic Ordering in (C2H5NH3)2Mn1-xCdxCl4, C. Tien, J. S. Hwang, I. J. Jang, H. M. Duh, C. W. Wur, K. J. Lin, and S. T. Lin, Chinese Journal of Physics, pp405-414, (1992).
9. Study of Schottky Barrier Formation in InP(110) by Photoreflectance」, J. S. Hwang and Z. Hang, Proceeding of the 4th International Conference on Indium Phosphide and Related Materials in R.I., USA, pp518-519, Apr. (1992) EI
10. Studies of Fornation and Inteface of Oil-Water Microemulsion, H. J. Gi, S. N. Chen, S. J. Hwang and C. Tien, Chinese Journal of Physics, pp.665-678, (1992).
11. Photoreflectance Studies of Ga0.5In0.5P/GaAs Hetero-structures Grown by MOCVD Technique, J. S. Hwang, Z. Hang, S. T. Tyan, S. W. Ding, J. H. Tung, C. Y.Chen, B. J. Lee and J. T. Hsu, Japanese Journal of Applied Physics (Letter), pp.L571-L573, (1992).
12. In-situ Photorefletanc Studies of Schottky Barrier Formation in InP(110), J. S. Hwang and S. L. Tyan, Journal of Vacuum Science & Tcehnology A, pp3176-3178, (1992).
13. Study of the Radial Characterization of DOPG Vesicles in Mediums by Photon Correlation Spectroscopy, C. L. Lin, S. C. Wu, J. S. Hwang, S. C. Ma and S. J. Jou, Journal of Chinese Colloid & Interface Society, pp.5-14,(1993).
14. Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxia Grown InAlAs Heterostructures, J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, H. H. Lin, T. L. Lee, D. Weyburne and Z. Hang, Applied Physics Letters, 64(24), 13 June pp.3314-3316(1994).
15. Investigation of Modulation-doped GaAs/AlGaAS Singal Quantum Well by Photoreflectance, S. L. Tyan, M. L. Lee, Y. C. Wang, W. Y. Wang, and J. S. Hwang, Journal of Vacuum Science & Tcehnology B13(3), May/Jun, pp1010, (1995).
16. Study of Surface Fermi Level and Surface State Distribution in InAlAs Surface-intrinsic-n+ Structure by Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, H. H. Lin and T. L. Lee, Applied Physics Letters 67 (16) 16 Oct. pp2350-2352 (1995).
17. Time Resolved Photoreflectance of GaAs and InAlAs, S. L. Tyan, Y. C. Wan, C. C. Chang, J. S. Hwang, Chinese Journal of Physics pp.669 (1995).
18. Raman Studies of Polymer-dispersed Liquid Crystal Films, Andy Y. G. Fuh, C. R. Sheu, C. Y. Huang, B. W. Tzen, G. L. Lin, T. C. Ko and J. S. Hwang, Chinese Journal of Physics Vol. 33 pp547-561 (1995).
19. Photoreflectance Study of Strained InAlAs/InP Structrues, Jenn-Shyong Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang and J. H. Tung, Proceeding of the 1995 Spring Meeting of Materials Research Society, Vol. 379, pp217-222 (1995). EI
20. Unambiguous Photoreflectance Determination of Electric Fields Using Phase Suppression, S. L. Tyan, Y. C. Wang, J. S. Hwang and H. Shen,68(24), Applied Physics Lett.,68(24), pp.3452-3454(1996)
21.The Electric Field Measuring by Phase Selective Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, H. Shen, Proceeding of the 1996 Spring Meeting of Materials Research Society, Vol. 421 (1996). EI
22. Built-in electric field and surface Fermi level in InP surface-intrinsic-N+ structures by modulation spectroscopy, J. S. Hwang and M. C. Hung, J. Appl. Phys.,82(7), pp.3888 (1997).
23. Electric Field Separation by Phase Selection in Modulation Spectroscopy of Photoreflectance, Y. C. Wang, W. C. Hwang and J. S. Hwang, Solid State Communications, 104(12), pp. 717-721(1997)
24. Effects of substrate preheating for the growth of ZnxCd1−xTe/(1 0 0)GaAs by MOCVD, Wang, Y.H.a; Sze, P.W.a; Wang, N.F.a; Hwang, J.S.b; Chou, W.Y.b; Wang, C.H.c; Cherng, Y.T.c; Chiang, C.D.c; Houng, M.P., J. Crystal Growth 180(2), pp. 177-184(1997)
25. 『Oxide-GaAs Interfacial Electronic Properties Characterized by Modulation Spectroscopy of Photoreflectance』 , J.S. Hwang, Y.C. Wang, W.Y. Chou, S.L. Tyan, M. Hong, J.P. Mannaerts, and J. Kwo, Journal of Applied Physics, Vol.83 (5), Communications, pp. 2857-2859(1998).
26. 『Analysis of Fermi level Pinning and Surface State Distribution in InAlAs Heterostructures』 , W.Y. Chou, G.S. Chang, W.C. Hwang and J.S. Hwang, Journal of Applied Physics 83 (7), pp. 3690-3695 (1998).
27. 『Diffusion Analysis of Gelatin Solutions by Photocorrelation Spectroscopy』 , J.S. Hwang, Z.P. Yang, S.B. Dai, S.L. Tyan, M.T. Kuo, and C.L. Lin, Chinese Journal of Physics 36 (5), p. 733 (1998).
28.『Determination of Surface State Density for GaAs and InAlAs by Room Temperature Photoreflectance』 , G.S. Chang, W.C. Hwang, Y.C. Wang, Z.P. Yang, and J.S. Hwang, Communication, Journal of Applied Physics 86(3), p1765 (1999).
29.『Studies of Lattice-matched InGaAs/InAlAs Single Quantum Well by Photoreflectance Spectroscopy and Wet Chemical Etching』, Y.C. Wang, Z.P. Yang, J.S. Hwang, Solid State Communications 111(4), p223 (1999).
30.『Energy spectrum of surface states of lattice-matched InAlAs surface intrinsic-n+ structure』 , J.S. Hwang, W.C. Hwang, Z.P. Yang, and G.S. Chang, Applied Physics Letters 75(16), p2467 (1999).
31. 『Phase Transition of LixNa1-xNbO3 Studies by Raman Scaterring Method』, Y.D. Juang, S.B. Dai, Y.C. Wang, J.S. Hwang, M.L. Hu, and W.S. Tse, Solid State Communications Vol. 111, p723 (1999).
32.「Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance」, J.S. Hwang and G.S. Chang, Proceeding of the 1999 Spring Meeting of Materials Research Society, Vol.573 PP. 213-218 (1999). EI
33.『Low Temperature Phase Transition of Li0.12Na0.88NbO3 Studies by Raman Scattering』,Y.D. Juang, S.B. Dai, J.S. Hwang, Y.C. Wang, M.L. Hu, and W.S. Tse, Journal of Applied Physics, 88, pp742-745 (2000).
34. 『Electroreflectance and Photoreflectance Studies of Surface Fermi Level and Surface Densities of InP SIN+ Structures』, W.C. Hwang, Y. J. Cheng, Y. C. Wang, and J. S. Hwang, Journal of Vacuum Science & Technology B, 18, p.1967 (2000).
35. 『A Photoreflectance Study of the Surface State Density and Distribution Function of InAlAs』, J. S. Hwang, W. C. Hwang , C. C. Chang , S. C. Chen , and Y. T. Lu, Journal of Applied Physics, 89, pp 396-400 (2001).
36. 『Photoreflectance Studies of the Surface State Density of InAlAs』, J. S. Hwang, G. S. Chang, W. C. Hwang, and W. J. Chen, Journal of Applied Physics, 89(3) , pp1771-1776 (2001).
37. 『Application of Diamond-Like Carbon Film to Phase-change Optical Recording Discs』, J. F. Chang, W. C. Hwang, C. T. Guo, H. Y. Ueng, T. F. Young, K. H. Sun and J. S. Hwang, Japanese Journal of Applied Physics, Vol. 40 (2001) Pt.1. No. 3A, pp. 38-42
38. 『應用類鑽石膜至表面聲波濾波器』,張振福, 黃文啟, 黃正雄, 工業材料雜誌, 173期, pp171-174 (2001).
10. 『應用類鑽石膜至相變化光碟之研究』,黃文啟, 張振福, 楊台發, 黃正雄, 工業材料雜誌, 176期, pp167-173 (2001).
39.「Study of Self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance」, J.S. Hwang, C.C. Chang, G.S. Chang, L.B. Chen, Y.T. Lu, H.H. Lin, M.C. Chen, Mat. Res. Soc. Symp. Proc.Vol.642, J3.51 (2001). EI
40. 『A novel approach for the Fourier transform of photoreflectance spectra』, J. S. Hwang, C. C. Chang, M. F.Chen, C. W. Kuo, and Y. T. Lu, Journal of the Physical Society of Japan, Vol. 71(12), letter, pp 2851-2854 (2002).
41. 『Schottky barrier height and interfacial state density on oxide-GaAs interface』, J. S. Hwang, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, Journal of Applied Physics, 94(1), pp 348-353 (2003).
42. 『Using Raman scattering to study the doping effect and low-temperature phase transition of Li0.01K0.99NbO3 ceramics』, S. B. Dai, Y. D. Juang, J. S. Hwang, and S. Y. Chu, J. of Crystal Growth 257, pp 316-320 (2003).
43. 『Effects of calcium on the phase transition and the dielectric properties of Sm-modified PbTiO3 ceramics』, S. B. Dai, Y. D. Juang, J. S. Hwang, D. E. Cheng, and S. Y. Chu, J. of Crystal Growth 255, pp 298-302 (2003).
44. 『Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance』, J. S. Hwang, M. F. Chen, K. I. Lin, C. N. Tsai, W. C. Hwang, W. Y. Chou, H. H. Lin, and M. C. Chen, Japanese Journal of Applied Physics, Vol. 42 (2003) Pt. 1, No. 9A, pp 5876-5879.
45. 『Optical excitations of finite carbon nanotubes』, R. B. Chen, C. P. Chang, F. L. Shyu, J. S. Hwang, M. F. Lin, CARBON, 42, pp 531-535 (2004).
46. 『Novel method of pentacene alignment using photoaligned polyimide and its application in thin-film transistors』, W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. S. Mai, S. T. Lin, C. C. Liao, C. C. Chang, F. C. Tang, and J. S. Hwang, Chemistry of Materials, Vol. 16, pp 4610-4615 (2004).
47. 『Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures』, J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, and C. W. Tu, Applied Physics Lett., 86(6), 061103-1(2005).
48. 『Comparison between pulsed terahertz time-domain imaging and continuous wave terahertz imaging』, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang,Semicond. Sci. Technol. 20(2005) S293-S299 (2005)
49. 『Terahertz Radiation from In0.52Al0.48As and GaAs SIN+ Structures with Various Surface-Intrinsic Layer Thicknesses』, J. S. Hwang, H. C. Lin, K. I. Lin and X. C. Zhang, Applied Physics Letters 87, 121107 (2005).
50.『Compact Continuous-wave sub-THz system for inspection applications』, Nick Karpowicz, Hua Zhong, Cunlin Zhang, Kuang-I Lin, Jenn-Shyong Hwang, Jingzhou Xu, and X.-C. Zhang, Applied Physics Letters, 86(5), P.054105 (2005)
51. Magnetization of Finite Carbon Nanotubes, R. B. Chen, C. P. Chang, J. S. Hwang, D. S. Chuu, M. F. Lin, Journal of the Physical Society of Japan, Vol.74 No.5 (2005)
52.「Non-Destructive Sub-THz CW Imaging」, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang, SPIE International Symposium, Photonics West 2005, Terahertz and gigahertz Electronics and Photonics IV, San Jose, Ca., UAS, 22-27 Jan. 2005, Proceedings of SPIE Vol. 5727 (2005). EI
53. Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy, Chie-In Lee, Yan-Ten Lu1, Yan-Kuin Su, Shoou-Jinn Chang, Jenn-Shyong Hwang1 and Chung-Chih Chang1, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (33-36): L1045-L1047 2005 SCI
54.『Effects of weak ordering of InGaPN』, K. I. Lin, J. Y. Lee, and J. S. Hwang,Applied Physics Letters, 86, 211914(2005) SCI
55.Investigation of Structure and Properties on Nanocrystalline Silicon on Various Buffer Layers, G. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, K. I. Lin and J. S. Hwang, J. of Electronic Materials, Vol. 34, No. 8, (2005)20. SCI
56. Studies of electro-optic properties and Band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang, Physica E: Low-dimensional Systems and Nanostructures 32 (2006) 211-214
57. Material Properties of dilute nitrides: Ga(In)NAs and Ga(In)NP, C.W. Tu, W.M. Chen, I.A. Buyanova, J.S. Hwang, J. Crystal Growth 288 (2006) 7-11 SCI
58. Preferential coalescence of nanocrystalline silicon on different film substrates, C. Y. Lin, Y. K. Fang*, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, and K. I. Lin, Journal of Non-Crystalline Solids 352, p. 44 (2006). SCI.
59. Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering, K. I. Lin and J. S. Hwang, J. Applied Physics(Rapid Communications) 99, 056103 (2006)
60.Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications,Chun-Yu Lin, Yean-Kuen Fang*, Shih-Fang Chen, Ping-Chang Lin, Chun-Sheng Lin, Tse-Heng Chou, Jenn-Shyong Hwang, and Kuang-I Lin Materials Science and Engineering B 127(2006) 251-254 SCI.
61. Characteristics of InGaPN/GaAs heterostructures investigated by photoreflectance spectroscopy, T. S. Wang, K. I. Lin, and J. S. Hwang*, Journal of Applied Physics 100, 093709 (2006). SCI. NSC94-2112-M-006-024
62. Band anticrossing in InGaPN alloys induced by N-related localized states, K. I. Lin and J. S. Hwang*, Applied Physics Letters 89, 192116 (2006). SCI. NSC94-2112-M-006-024
63. Surface free energy of alloy nitride coatings deposited using closed field unbalanced magnetron sputter ion plating, C. C. Sun, S. C. Lee, W. C. Hwang, J. S. Hwang, I. T. Tang and Y. S. Fu, Materials Transactions, Vol. 47,No. 10(2006) pp.2533 to 2539
64. Studies of the critical electric field and valley offset of a semiconductor characterized by terahertz radiation.J. S. Hwang, H. C. Lin, C. G. Chang, L. S. Chang, Y. T. Lu, Proc. of SPIE vol.6472, 647203-1 to 647203-8(2007)
65. The dependence of teraherz radiation on the built-in electric field in semiconductor microstructures, J. S. Hwang, H. C. Lin et el.,Optics Express Vol.15, No.8 pp5120-5125(2007)
66. Conjugate Polymer Induced Enhancement of THz Radiation in Semiconductors, J. S. Hwang, Hui-Chang Lin, Yin-Cheng Huang, Kuang-I Lin, Jer-Wei Chang and Tzung-Fang Guo, ECS Trans. 11, (5) 59(2007)
67. Enhancement of THz Radiation in Semiconductors Induced by Conjugate Polymer,J. S. Hwang, H. C. Lin, Y. C. Huang, K. I. Lin, J. W Chang and T. F Guo, Electrochemical and Solid-State Letters, 11(3) H63-H65 (2008)
68. Characterization of band gap and strain relaxation of GaAsSb/GaAs heterojunction and band alignment of GaAsSb/GaAs mutiple quantum wells, T. S. Wang, J. T. Tsai, K. I. Lin, H. C. Lin, Y. T. Lu, J. S. Hwang *), H. H. Lin, L. C. Chou, Material Science and Engineering B 147(2008) 131-135
69. Analysis of band anticrossing in InGaPN alloys grown on GaAs substrattes, K. I. Lin, H. C. Lin, T. S. Wang, and J. S. Hwang* , Phys. stat. sol. (c) 5, No. 2, 449-453 (2008).
70. Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN, K. I. Lin, Y. T. Lu and J. S. Hwang, Physica E-Low-Dimensional System and Nanostructures, Physica E 40(2008) 2188-2191
71. Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance, T. S. Wang, K. I. Lin, H. C. Lin, Y. T. Lu and J. S. Hwang*, Physica E 40(2008) 1975-1978
72. Synthesis and characterization of Al2O3-Ce0.5Zr0.5O2 powders prepared by chemical coprecipitation method, Chia-Che Chung, Hsing-I Hsing-I Hsiang, Jenn-Shyong Hwang, Tai-Shen Wang, J. of Alloys and Compounds (2008)
73. Temperature-dependedce paramerters of band anticrossing in InGaPN alloys, K. I. Lin, T. S. Wang, J. T. Tsai, and J. S. Hwang, Journal of Applied Physics 104, 016109 (2008)
74. Drift current dominated terahertz radiation from InN at low-density excitation,K. I. Lin,J. T. Tsai, T. S. Wang, J. S. Hwang,M. C. Chen, and G.C. Chi, Applied Physics Letters 93, 262102 (2008)
75. Synthesis and characterization of Al2O3-Ce0.5Zr0.5O2 powders prepared by chemical coprecipitation method, Chia-Che Chung, Hsing-I Hsing-I Hsiang, Jenn-Shyong Hwang, Tai-Shen Wang, Journal of Alloys and Compounds,Volume 470, Issues 1-2, 20 February 2009, Pages 387-392
76. Structural and Dielectric Characteristics of Calcium Strontium Magnesium Niobate, Chun-Te Lee, Chi-Yuen Huang, Yi-Chang Lin, and Jenn-Shyong Hwang, Jpn. J. Appl. Phys. 48(2009) 055501
77. 兆赫輻射在半導體光電特性研究與成像檢測的應用,物理雙月刊(卅一卷二期) 2009 年四月
78. Strong Surface Fermi Level Pinning and Surface State Density of GaAsSb Surface Intrinsic-n+ Structure, K. I. Lin, H. C. Lin, J. T. Tsai, C. S. Cheng, Y. T. Lu, J. S. Hwang* et al., Applied Physics Letters, 95, 141912(2009)
79. K. I. Lin*, J. T. Tsai, J. S. Hwang, and M. C. Chen,『Terahertz radiation by spontaneous polarization fields in InN』, Physica E 42, 2669 (2010). SCI.
79. J. S. Hwang*, J. T. Tsai, K. I. Lin, M. H. Lee, C. N. Tsai, H. W. Lin, S. Gwo, and M. C. Chen,『Terahertz radiation mechanism of native n-type InN with different carrier concentrations』, Applied Physics Express 3, 102202 (2010). SCI.
80. Photoreflectance Study of InN Films with In and N Polarities, K. I. Lin*, J. T. Tsai, I. C. Su, J. S. Hwang*, and S. Gwo, Applied Physics Express 4, 112601 (2011). SCI.
81. J. S. Hwang,* J. T. Tsai, I. C. Su, H. C. Lin and Y. T. Lu, P. C. Chiu and J. I. Chyi, GaAsSb bandgap, surface Fermi level and surface state density studied by photoreflectance modulation spectroscopy, Appl. Phys. Lett. 100, 222104(2012)�^
II. Conference Papers:(International Conference Only)
1. Study of Schottky Barrier Formation in InP(110) by Photoreflectance」, J. S. Hwang and Z. Hang, Proceeding of the 4th International Conference on Indium Phosphide and Related Materials, Apr. (1992) R.I., USA
2. Photoreflectance Study of Strained InAlAs/InP Structrues, Jenn-Shyong Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang and J. H. Tung, the 1995 Spring Meeting of Materials Research Society, (1995) San Francisco Ca. USA.
3. The Electric Field Measuring by Phase Selective Photoreflectance, J. S. Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, H. Shen, the 1996 Spring Meeting of Materials Research Society,(1996) San Francisco Ca. USA.
4.Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance, J.S. Hwang and G.S. Chang, the 1999 Spring Meeting of Materials Research Society,(1999) San Francisco Ca. USA.
5.Study of Self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance, J.S. Hwang, C.C. Chang, G.S. Chang, L.B. Chen, Y.T. Lu, H.H. Lin, M.C. Chen, the 2001 Fall Meeting of Mat. Res. Soc. (2001). Boston Ma. USA
6.Non-Destructive Sub-THz CW Imaging, Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang, SPIE International Symposium, Photonics West 2005, Terahertz and gigahertz Electronics and Photonics IV, San Jose, Ca., UAS, 22-27 Jan. 2005, Proceedings of SPIE Vol. 5727 (2005). EI
7. Materials properties of dilute nitrides: Ga(In)NAs and Ga(In)NP, C. W. Tu, W. M. Chen, I. Buyanova, and J. S. Hwang, Invited talk in the International Conference on Advanced Materials (IUMRS-ICAM), 3-8 July (2005). Singapore.
8. Effects of Epitaxial Strain and Atomic Ordering of InGaPN/GaAs Heterostructures, Kuang-I Lin, Tai-Shen Wang, Yan-Ten Lu, and Jenn-Shyong Hwang*, MBE Taiwan 2005.
9. Studies of Electro-optical Properties and Band Alignment of InGaPN/GaAs Heterotructures by Photoreflectance and Photoluminescence, Kuang-I Lin, Yan-Ten Lu, and Jenn-Shyong Hwang*, MBE Taiwan 2005.
10. Studies of Terahertz Radiation from InAlAs and GaAs Surface Intrinsic-N+ Structures and the Critical Electric Fields of Semiconductor, J. S. Hwang, H. C. Lin, K. I. Lin and Y. T. Lu, the International Conference on Quantum Electronics 2005 and the Pacific Rim Conference on Lasers and Electro-optics 2005(IQEC/CLEO-PR 2005), Tokyo, Japan
11. Effects of epitaxial strain and atomic ordering InGaPN/GaAs heterostructures, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang*, 12th International Conference on Modulatted Semiconductor Structures (2005), New Mexico, USA
12. Studies of electro-optic properties and Band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence, K. I. Lin, T. S. Wang, Y. T. Lu and J. S. Hwang*, 12th International Conference on Modulatted Semiconductor Structures (2005), New Mexico, USA
13. Band alignment and effects of epitaxial strain and atomic ordering in InGaP(1-y)Ny/GaAS, European Materials Research Society Spring Meeting, May 29-June 2, 2006, Nice, France
14. Studies of the critical electric field and valley offset of a semiconductor characterized by terahertz radiation.J. S. Hwang, H. C. Lin, C. G. Chang, L. S. Chang, Y. T. Lu, SPIE Photonics West 2007, Jan. 20-Jan. 25, 2007, San Jose, USA
16. The critical electric field and L valley offset of semiconductors determined by terahertz radiation, J. S. Hwang a), H. C. Lin 1, K. I. Lin, Y. T. Lu 1, J. Y. Chyi and H. H. Lin , invited talk, MBE Taiwan 2007.
17. The Enhancement of THz Radiation of Semiconductors Induced by Conjugate Polymer (DB-PPV), Jenn-Shyong Hwang, Hui-Ching Lin, Yin-Chieh Huang, and Kunag-I Lin, Meet. Abstr. –Electronchem. Soc. 702, 1259 (2007)
18. Conjugated polymer induced enhancement of THz radiation in semiconductor, J. S. Hwang, H. H. Lin, K. I. Lin, SPIE 6893-12(2008), San Jose, USA
19. K. I. Lin*, J. T. Tsai, J. S. Hwang, and M. C. Chen,『Polarity determination of InN by terahertz radiation』, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP65, p. 284.
20. J. T. Tsai, K. I. Lin, Y. T. Lu, S. Gwo, M. C. Chen, G. C. Chi, and J. S. Hwang*,『Characterization of photoelastic effects on the optical properties of strained InN films』, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP67, p. 286.
21. J. S. Hwang*, K. I. Lin, and C. C. Chang,『Determination of the polarity of InN by terahertz radiation』, SPIE Photonics West 2010, Ultrafast Phenomena in Semiconductors and nanostructure Materials XIV, Session 5: Plasmonics I, Paper 7600-24, San Francisco, USA, Jan. 23-28, 2010. (Invited Paper)
22. K. I. Lin, J. T. Tsai, M. H. Lee, P. C. Chiu, S. H. Chen, J. I. Chyi, and J. S. Hwang*,『Surface Fermi level and surface state density in GaAsSb surface intrinsic-n+ structures by photoreflectance spectroscopy』, the APS March Meeting, Session C1.00200, Portland, Oregon, Mar. 15–19, 2010.
23. Y. C. Huang*, Y. C. Chen, I. W. Chen, J. T. Tsai, K. I. Lin, J. S. Hwang, C. H. Wang, C. W. Liang, Y. H. Chu,『Phase Evolution in Mixed Phase BiFeO3 Epitaxial Films』, the 18th International Vacuum Congress, P1-EMP1-12, Beijing, China, Aug. 23-27, 2010.
24. Kuang-I Lin*, Jung-Tse Tsai, Jenn-Shyong Hwang, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen,『Terahertz radiation mechanism of native n-type InN with different carrier concentrations』, the APS March Meeting, Session B11.00001, Dallas, Texas, Mar. 21–25, 2011.
25. Y. C. Huang*, Y. C. Chen, C. Cheng, K. I. Lin, J. S. Hwang, W. I. Liang, H. J. Chen, and Y. H. Chu,『Monoclinic phase transition in stress-induced BiFeO3 epitaxial films』, the APS March Meeting, Session C1.00278, Dallas, Texas, Mar. 21–25, 2011.
26.Kuang-I Lin*, Jung-Tse Tsai, I-Cheng Su, Jenn-Shyong Hwang, and Shangjr Gwo,『Photoreflectance study of the band gap, crystal-field splitting, and spin-orbit splitting in InN』, the 31st International Conference on the Physics of Semiconductors, p.60.18, Zurich, Switzerland, Jul. 29-Aug. 3, 2012.